Characterization of P3HT/PCBM bulk heterojunction photovoltaic devices using advanced secondary ion mass spectrometry techniques
Identifieur interne : 004605 ( Main/Repository ); précédent : 004604; suivant : 004606Characterization of P3HT/PCBM bulk heterojunction photovoltaic devices using advanced secondary ion mass spectrometry techniques
Auteurs : RBID : Pascal:10-0427782Descripteurs français
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Abstract
In this work, we applied low-impact energy secondary ion mass spectrometry (known as Sc-Ultra SIMS) and high lateral resolution (NanoSIMS50) to characterize the P3HT/PCBM (poly(3-hexylthiophene)/phenyl C61-butyric acid methyl ester bulk heterojunction photovoltaic (PV) devices. Here we report results obtained on Al/P3HT:PCBM/PEDOT:PSS/ITO (poly(3-hexylthiophene: phenyl C61-butyric acid methyl ester/poly(ethylene-dioxythiophene):poly(styrene sulfonate)/indium tin oxide) using advanced SIMS measurements to monitor 3D molecular compositions and metal/organic interface. The measurements have been performed on as-deposited as well as-annealed samples of Al/polymer interface. Blend macrophase separation and polymer/fullerene distribution have been investigated.
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<front><div type="abstract" xml:lang="en">In this work, we applied low-impact energy secondary ion mass spectrometry (known as Sc-Ultra SIMS) and high lateral resolution (NanoSIMS50) to characterize the P3HT/PCBM (poly(3-hexylthiophene)/phenyl C61-butyric acid methyl ester bulk heterojunction photovoltaic (PV) devices. Here we report results obtained on Al/P3HT:PCBM/PEDOT:PSS/ITO (poly(3-hexylthiophene: phenyl C61-butyric acid methyl ester/poly(ethylene-dioxythiophene):poly(styrene sulfonate)/indium tin oxide) using advanced SIMS measurements to monitor 3D molecular compositions and metal/organic interface. The measurements have been performed on as-deposited as well as-annealed samples of Al/polymer interface. Blend macrophase separation and polymer/fullerene distribution have been investigated.</div>
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